Transition Mechanisms of Two Interacting DX Centers in N-Type AlGaAs using Reverse-Bias Deep Level Transient Spectroscopy and Temperature-Dependent Pulse-Width Reverse-Bias Deep Level Transient Spectroscopy Methods

Author

C. W. Wang
Cheng-Hsiao Wu, Missouri University of Science and TechnologyFollow

Abstract

The reverse-bias pulsed deep level transient spectroscopy (RDLTS) and a new temperature-dependent pulse-width RDLTS (TDP RDLTS) technique are reported to study the electric-field effect on carrier emission rates and the direct interaction between double DX centers recently detected in the Se:Al_0.6Ga_0.4As N confinement layer of the AlGaAs/GaAs single-quantum-well laser diodes. Traditional RDLTS measurements, with constant pulse width t_p, prove that the two DX centers, Et₁ and Et₂, have strong direct emission interaction. Furthermore, the new TDP-RDLTS technique enables one to evaluate this direct transition time constant. Possible mechanisms for this interstate transition at different temperature ranges are provided and the new broadening effect due to this interstate transition is also reported here for the first time. Field-enhanced emission rates are calculated.

Recommended Citation

C. W. Wang and C. Wu, "Transition Mechanisms of Two Interacting DX Centers in N-Type AlGaAs using Reverse-Bias Deep Level Transient Spectroscopy and Temperature-Dependent Pulse-Width Reverse-Bias Deep Level Transient Spectroscopy Methods," Journal of Applied Physics, vol. 74, no. 6, pp. 3921 - 3926, American Institute of Physics (AIP), Sep 1993.

The definitive version is available at https://doi.org/10.1063/1.354491

Department(s)

Electrical and Computer Engineering

International Standard Serial Number (ISSN)

0021-8979

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 1993 American Institute of Physics (AIP), All rights reserved.

Publication Date

01 Sep 1993