IGBT and Diode Loss Estimation under Hysteresis Switching
This paper presents a power loss estimation method for insulated-gate bipolar transistors (IGBTs) and diodes that operate under hysteresis switching. The method relies on datasheet information and three measurements in a phase leg: phase current, one IGBT switching gate signal, and the dc bus voltage across the phase leg. No parasitic models, thermal analysis, or slow simulations are required, and measurements can be provided from simulations or experiments. The method is validated for periodic pulsewidth modulation, then for aperiodic hysteresis switching. Results show that the proposed method is accurate while maintaining simplicity. It is promising for implementation in combined thermoelectric simulations and design optimization.
A. M. Bazzi et al., "IGBT and Diode Loss Estimation under Hysteresis Switching," IEEE Transactions on Power Electronics, vol. 27, no. 3, pp. 1044-1048, Institute of Electrical and Electronics Engineers (IEEE), Mar 2012.
The definitive version is available at https://doi.org/10.1109/TPEL.2011.2164267
Electrical and Computer Engineering
United States. Office of Naval Research
Keywords and Phrases
DC-Bus Voltages; Design Optimization; Gate Signals; Hysteresis Switching; Loss Estimation; Phase Currents; Power-Losses; Semiconductor Loss; Computer Simulation; DC Power Transmission; Estimation; Hysteresis; Insulated Gate Bipolar Transistors (IGBT); Optimization; Semiconductor Diodes; Thermoanalysis; Switching; Aperiodic Switching; Electrothermal Design; IGBT Loss Estimation; Semiconductor Losses
International Standard Serial Number (ISSN)
Article - Journal
© 2012 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Mar 2012