Wide-Bandgap Semiconductor Technology: Its Impact on the Electrification of the Transportation Industry
Abstract
The efficiency of any electric vehicle (EV) is limited by the efficiency of its power electronic motor drive. Currently, EVs use conventional silicon (Si) insulated-gate bipolar transistor (IGBT) or Si metal-oxide-semiconductor field-effect transistor (MOSFET) technologies. Si technology prevents traction motor drives from exceeding the low switching frequencies (tens of kilohertz) due to excessive switching losses. This is important as the size of passive components (and thus cost) is inversely related to the switching frequency.
Recommended Citation
P. Shamsi et al., "Wide-Bandgap Semiconductor Technology: Its Impact on the Electrification of the Transportation Industry," IEEE Electrification Magazine, vol. 1, no. 2, pp. 59 - 63, Institute of Electrical and Electronics Engineers (IEEE), Dec 2013.
The definitive version is available at https://doi.org/10.1109/MELE.2013.2293931
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Efficiency; Electric Drives; Electric Motors; Electron Beam Lithography; Field Effect Transistors; Insulated Gate Bipolar Transistors (IGBT); Metals; MOS Devices; MOSFET Devices; Oxide Semiconductors; Power MOSFET; Power Transistors; Semiconductor Device Manufacture; Silicon; Switching Frequency; Traction Motors; Transistors; Wide Band gap Semiconductors; Electronic Motors; Low Switching Frequency; Si Technology; Switching Loss; Traction Motor Drives; Transportation Industry; Semiconducting Silicon
International Standard Serial Number (ISSN)
2325-5897
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2013 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Dec 2013
