Analysis of the Thermal Effects of GaAs FETs under the High-Power Electromagnetic Pulses
In this paper, the transient thermal characteristics of GaAs field-effect transistors (FETs) in the presence of high-power electromagnetic pulses (HP-EMP) are investigated. By hybrid finite element methods which combining element-by-element finite element method (EBE-FEM) with the preconditioned conjugate gradient (PCG) technique, transient thermal responses including the maximum channel temperature of GaAs FETs and the maximum input power density of the thermal sources are extracted which will be useful for further taking thermal protection so as to prevent on-chip device breakdown from the attack of a HP-EMP.
J. Xu et al., "Analysis of the Thermal Effects of GaAs FETs under the High-Power Electromagnetic Pulses," Proceedings of the International Conference on Microwave and Millimeter Wave Technology (2008, Nanjing, China), vol. 3, pp. 1431-1434, Institute of Electrical and Electronics Engineers (IEEE), Apr 2008.
The definitive version is available at https://doi.org/10.1109/ICMMT.2008.4540713
International Conference on Microwave and Millimeter Wave Technology (2008: Apr. 21-24, Nanjing, China)
Electrical and Computer Engineering
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Computer Networks; Conjugate Gradient Method; Electromagnetic Pulse; Field Effect Transistors; Gallium Alloys; Gradient Methods; Materials Science; MESFET Devices; Microwaves; Millimeter Wave Devices; Millimeter Waves; Nuclear Explosions; Semiconducting Gallium; Transistors; Breakdown; FEM; GaAs Field-Effect Transistors (FETs); High-Power Electromagnetic Pulse (HP-EMP); Millimeter-Wave Technologies; Electromagnetic Waves
International Standard Book Number (ISBN)
Article - Conference proceedings
© 2008 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Apr 2008