Analysis of the Thermal Effects of GaAs FETs under the High-Power Electromagnetic Pulses

Abstract

In this paper, the transient thermal characteristics of GaAs field-effect transistors (FETs) in the presence of high-power electromagnetic pulses (HP-EMP) are investigated. By hybrid finite element methods which combining element-by-element finite element method (EBE-FEM) with the preconditioned conjugate gradient (PCG) technique, transient thermal responses including the maximum channel temperature of GaAs FETs and the maximum input power density of the thermal sources are extracted which will be useful for further taking thermal protection so as to prevent on-chip device breakdown from the attack of a HP-EMP.

Meeting Name

International Conference on Microwave and Millimeter Wave Technology (2008: Apr. 21-24, Nanjing, China)

Department(s)

Electrical and Computer Engineering

Research Center/Lab(s)

Electromagnetic Compatibility (EMC) Laboratory

Keywords and Phrases

Computer Networks; Conjugate Gradient Method; Electromagnetic Pulse; Field Effect Transistors; Gallium Alloys; Gradient Methods; Materials Science; MESFET Devices; Microwaves; Millimeter Wave Devices; Millimeter Waves; Nuclear Explosions; Semiconducting Gallium; Transistors; Breakdown; FEM; GaAs Field-Effect Transistors (FETs); High-Power Electromagnetic Pulse (HP-EMP); Millimeter-Wave Technologies; Electromagnetic Waves

International Standard Book Number (ISBN)

978-1424418794

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2008 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Apr 2008

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