Femtosecond Laser-induced Silicon Surface Morphology in Water Confinement
This article investigates the use of femtosecond laser induced surface morphology on silicon wafer surface in water confinement. Unlike irradiation of silicon surfaces in the air, there are no laser induced periodic structures, but irregular roughness is formed when the silicon wafer is ablated under water. The unique discovery of a smoothly processed silicon surface in water confinement under certain laser parameter combinations may help improve laser direct micromachining surface quality in industrial applications.
H. Yukun et al., "Femtosecond Laser-induced Silicon Surface Morphology in Water Confinement," Microsystem Technologies, Springer-Verlag, Jul 2009.
The definitive version is available at https://doi.org/10.1007/s00542-009-0880-8
Electrical and Computer Engineering
Mechanical and Aerospace Engineering
Keywords and Phrases
Femtosecond Laser; Laser Induced Periodic Structures; Laser Parameters; Lasers; Morphology; Pulsed Laser Applications; Semiconducting Silicon Compounds; Silicon Surface Morphology; Silicon Surfaces; Silicon Wafers; Silicon Water Surfaces; Surface Morphology; Surface Qualities
International Standard Serial Number (ISSN)
Article - Journal
© 2009 Springer-Verlag, All rights reserved.
01 Jul 2009