Modeling of the Immunity of ICs to EFTs
Abstract
Investigation of the immunity of ICs to EFTs is increasingly important. In this paper, an accurate model of a microcontroller is developed and verified. This model consists of two parts: a passive Power Distribution Network (PDN) model and an active I/O protection network model. Measurement methods are designed to extract the parameters of the passive PDN model. The accuracy of the overall model of the IC is verified using both S parameter tests and EFT injection tests. The model is able to accurately predict the voltage and current at power-supply and I/O pins and correctly accounts for the active components of the I/O protection network.
Recommended Citation
J. Zhang et al., "Modeling of the Immunity of ICs to EFTs," Proceedings of the 2010 IEEE International Symposium on Electromagnetic Compatibility (2010, Fort Lauderdale, FL), pp. 484 - 489, Institute of Electrical and Electronics Engineers (IEEE), Jul 2010.
The definitive version is available at https://doi.org/10.1109/ISEMC.2010.5711323
Meeting Name
2010 IEEE International Symposium on Electromagnetic Compatibility, EMC 2010 (2010: Jul. 25-30, Fort Lauderdale, FL)
Department(s)
Electrical and Computer Engineering
Research Center/Lab(s)
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Integrated Circuit Modeling; Semiconductor Device Measurement; Clamps; Power Measurement; Impedance; Pins
International Standard Book Number (ISBN)
978-1-4244-6305-3
International Standard Serial Number (ISSN)
2158-110X
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2010 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jul 2010
