Novel De-Embedding Methodology and Broadband Microprobe Measurement for Through-Silicon Via Pair in Silicon Interposer


In this paper, a novel de-embedding methodology is proposed for through silicon via (TSV) characterization by using a set of simple yet efficient test patterns. For all the test patterns, full wave models are developed and the electrical performance of the test patterns is analyzed thoroughly. Furthermore, broadband measurements are performed for the test patterns to verify the accuracy of the developed full wave models up to 40 GHz. Correlation between measurement and simulation results is discussed after optimizing the full wave models based on scanning electron microscope measurement. Analysis of measurement error is available as well. The proposed de-embedding method is applied to both the simulation and measurement results to extract the electrical characteristics of the TSV pair. Good agreement between the de-embedded results with analytical solution and the full-wave simulation for a standalone TSV pair indicates that the proposed de-embedding method works effectively up to 40 GHz. Finally, sensitivity analysis with regard to manufacturing tolerance of the test patterns to the final de-embedded results is performed.


Electrical and Computer Engineering

Research Center/Lab(s)

Electromagnetic Compatibility (EMC) Laboratory


This work was supported by the National Science Foundation under Grant IIP-1440110.

Keywords and Phrases

Analytical Solution; Broadband Microprobe Measurement; Calibration Quality; De-Embedding; Error Analysis; Full-Wave Simulation; Sensitivity Analysis; Through Silicon Via (TSV)

International Standard Serial Number (ISSN)


Document Type

Article - Journal

Document Version


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© 2017 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Oct 2017