Analytical Evaluation of Scattering Parameters for Equivalent Circuit of through Silicon Via Array
The high level of integration in digital electronic chips based on threedimensional (3D) technology requires accurate modelling of the vertical interconnects (the through silicon vias - TSVs). An accurate prediction of the signal propagation and crosstalk of the TSVs cannot be based on the single via since the interaction among adjacent TSVs in a high density array cannot be neglected. An algorithm is proposed that extends the approach for modelling a TSV array with a complete analytical evaluation of the final multiport scattering parameter matrix, thus making the electromagnetic modelling of such structures more efficient without relying on commercial circuit solvers. The proposed method requires much less processing time with respect to commercial solvers with a comparable accuracy.
R. Cecchetti et al., "Analytical Evaluation of Scattering Parameters for Equivalent Circuit of through Silicon Via Array," Electronics Letters, vol. 51, no. 13, pp. 1025-1027, Institution of Engineering and Technology, Jun 2015.
The definitive version is available at https://doi.org/10.1049/el.2015.1265
Electrical and Computer Engineering
Center for High Performance Computing Research
Second Research Center/Lab
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Electronics packaging; Integrated circuit interconnects; Integrated circuit manufacture; Parameter estimation; Scattering parameters; Accurate prediction; Analytical evaluation; Digital electronics; Electromagnetic modelling; High-density arrays; Level of integrations; Through silicon vias; Through-Silicon-Via; Three dimensional integrated circuits
International Standard Serial Number (ISSN)
Article - Journal
© 2015 Institution of Engineering and Technology, All rights reserved.
01 Jun 2015