A first-order behavioral IGBT/gate drive model is proposed together with a procedure for deriving all model parameters. Despite the simplicity of the proposed model, comparison of model predictions with hardware measurements demonstrate the model to be accurate in predicting turn-on and turn-off transients.
J. L. Tichenor et al., "Behavioral IGBT Modeling for Predicting High Frequency Effects in Motor Drives," IEEE Transactions on Power Electronics, vol. 15, no. 2, pp. 354-360, Institute of Electrical and Electronics Engineers (IEEE), Mar 2000.
The definitive version is available at https://doi.org/10.1109/63.838108
Electrical and Computer Engineering
University of South Carolina
United States. Office of Naval Research
Keywords and Phrases
IGBT Modeling; First-Order Behavioral IGBT/Gate Drive Model; Hardware Measurements; High Frequency Effects Prediction; High-Frequency Effects; Insulated Gate Bipolar Transistors; Model Parameters Derivation; Motor Drives; Semiconductor Device Models; Transients; Turn-Off Transients Prediction; Turn-On Transients Prediction; Bipolar Transistors; Computer Simulation; Electric Motors; Frequency Response; Parameter Estimation; Semiconductor Device Structures; Transients; Insulate Gates Bipolar Transistor; Turn Off Transients; Turn On Transients; Electric Drives
International Standard Serial Number (ISSN)
Article - Journal
© 2000 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Mar 2000