Abstract
A first-order behavioral IGBT/gate drive model is proposed together with a procedure for deriving all model parameters. Despite the simplicity of the proposed model, comparison of model predictions with hardware measurements demonstrate the model to be accurate in predicting turn-on and turn-off transients.
Recommended Citation
J. L. Tichenor et al., "Behavioral IGBT Modeling for Predicting High Frequency Effects in Motor Drives," IEEE Transactions on Power Electronics, vol. 15, no. 2, pp. 354 - 360, Institute of Electrical and Electronics Engineers (IEEE), Mar 2000.
The definitive version is available at https://doi.org/10.1109/63.838108
Department(s)
Electrical and Computer Engineering
Sponsor(s)
University of South Carolina
United States. Office of Naval Research
Keywords and Phrases
IGBT Modeling; First-Order Behavioral IGBT/Gate Drive Model; Hardware Measurements; High Frequency Effects Prediction; High-Frequency Effects; Insulated Gate Bipolar Transistors; Model Parameters Derivation; Motor Drives; Semiconductor Device Models; Transients; Turn-Off Transients Prediction; Turn-On Transients Prediction; Bipolar Transistors; Computer Simulation; Electric Motors; Frequency Response; Parameter Estimation; Semiconductor Device Structures; Transients; Insulate Gates Bipolar Transistor; Turn Off Transients; Turn On Transients; Electric Drives
International Standard Serial Number (ISSN)
0885-8993; 1941-0107
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2000 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Mar 2000
Comments
This work was supported by the University of South Carolina under Grant N00014-96-1-0926 with the Office of Naval Research.