Abstract
It is often assumed that the faults in storage elements (SEs) can be modeled as output/input stuck-at faults of the element. They are implicitly considered equivalent to the stuck-at faults in the combinational logic surrounding the SE cells. Transistor-level faults in common SEs are examined here. A more accurate higher level fault model for elementary SEs that better represents the physical failures is presented. It is shown that a minimal (stuck-at) model may be adequate if only modest fault coverage is desired. The enhanced model includes some common fault behaviors of SEs that are not covered by the minimal fault model. These include data-feedthrough and clock-feedthrough behaviors, as well as problems with logic level retention. Fault models for complex SE cells can be obtained without a significant loss of information about the structure of the circuit. The detectability of feedthrough faults is considered.
Recommended Citation
W. K. Al-Assadi et al., "Faulty Behavior of Storage Elements and Its Effects on Sequential Circuits," IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Institute of Electrical and Electronics Engineers (IEEE), Jan 1993.
The definitive version is available at https://doi.org/10.1109/92.250192
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Clock-Feedthrough Behavior; Data-Feedthrough Behavior; Fault Behaviors; Fault Coverage; Fault Detectability; Fault Location; Fault Model; Logic Level Retention; Logic Testing; Physical Failures; Sequential Circuits; Storage Elements; Transistor-Level Faults
International Standard Serial Number (ISSN)
1063-8210
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 1993 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jan 1993
