Epitaxial Electrodeposition of Cu₂O Films onto InP(001)
The exitaxial electrodeposition of Cu₂O films onto InP(001) was discussed. The x-ray diffraction studies indicated a unique epitaxial 45° orientation relationship between Cu₂O and InP. The transmission electron microscopy revealed an amorphous oxygen-rich interlayer between the Cu₂O and the InP crystal, in apparent contradiction to the observation of a unique epitaxial orientation relationship.
R. Liu et al., "Epitaxial Electrodeposition of Cu₂O Films onto InP(001)," Applied Physics Letters, American Institute of Physics (AIP), Jan 2003.
The definitive version is available at https://doi.org/10.1063/1.1606503
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© 2003 American Institute of Physics (AIP), All rights reserved.
01 Jan 2003