Microfabrication of WO3-based Microelectrochemical Devices
A new photolithographic process for the patterning of WO3 is reported. A layer of sputtered polycrystalline WO3 can be patterned by a combination of photolithographic and dry etching processes to selectively cover a fraction of eight Pt microelectrodes each ∼50 μm long, 2 μm wide, and 0.3 μm thick, and spaced 1.2 μm apart. The modified microelectrode arrays were characterized by electrochemistry, surface profilometry, and scanning electron microscopy. A pair of microelectrodes connected by WO3 comprises a microelectrochemical transistor with pH-dependent electrical characteristics based on the pH and potential dependent conductivity of WO3 associated with the reversible electrochemical reaction WO3+nH++ne-⇄H nWO3.
M. O. Schloh et al., "Microfabrication of WO3-based Microelectrochemical Devices," Journal of Applied Physics, American Institute of Physics (AIP), Jan 1989.
The definitive version is available at https://doi.org/10.1063/1.343474
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Article - Journal
© 1989 American Institute of Physics (AIP), All rights reserved.
01 Jan 1989