Resistance Switching in Electrodeposited Polycrystalline Fe₃O₄ Films
Resistance random access memory (RRAM) is an emerging nonvolatile memory that offers advantages of scalability, fast switching, and low voltages. Magnetite, Fe3O4, has been shown to exhibit resistance switching in nanoscale architectures such as superlattices. Here, we show that electrodeposited polycrystalline films of Fe3O4 exhibit multistate resistance switching. Experiments suggest that the insulator-to-metal transition may be facilitated by the presence of a thin nano-crystalline layer which is critical for resistance switching to occur at lower bias. We also show that the switching behavior can be tuned through the applied deposition potential. the multiple resistance states accessible in these simple architectures open up new possibilities for multi-bit data storage and retrieval.
R. V. Gudavarthy et al., "Resistance Switching in Electrodeposited Polycrystalline Fe₃O₄ Films," Electrochimica Acta, Elsevier, Feb 2011.
The definitive version is available at https://doi.org/10.1016/j.electacta.2011.02.032
United States. Department of Energy
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© 2011 Elsevier, All rights reserved.
01 Feb 2011