Epitaxial Electrodeposition of High-aspect-ratio Cu₂O(110) Nanostructures on InP(111)
Epitaxial cuprous oxide nanostructures with high aspect ratio were deposited electrochemically on n-InP(111) from aqueous solution at room temperature. High-resolution X-ray diffraction shows that the Cu2O and InP form three equivalent epitaxial orientation relationships that are rotated 120 relative to each other: Cu2O(110) || InP(111), Cu2O(110) || InP(111), and Cu2O(110) || InP(111). the size and aspect ratio of the Cu2O nanostructures depend on the applied deposition current density. at a deposition current density of 0.125 mA/cm2, uniformly sized nanostructures 30 nm wide and 1000 nm long were obtained. Transmission electron microscopy reveals an amorphous, oxygen-rich interlayer and a crystalline Cu3P layer between the Cu2O and InP.
R. Liu et al., "Epitaxial Electrodeposition of High-aspect-ratio Cu₂O(110) Nanostructures on InP(111)," Chemistry of Materials, vol. 17, no. 4, pp. 725-729, American Chemical Society (ACS), Jan 2005.
The definitive version is available at https://doi.org/10.1021/cm048296l
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© 2005 American Chemical Society (ACS), All rights reserved.
01 Jan 2005