Missouri S&T Scholar's Mine Research RepositoryMissouri S&T Research
print 
Title: System and IC level analysis of electrostatic discharge (ESD) and electrical fast transient (EFT) immunity and associated coupling mechanisms
Alternate Title: Correlation between EUT failure levels and ESD generator parameters.
Frequency domain measurement method for the analysis of ESD generators and coupling.
Non-linear [Greek character for mu]-controller power distribution network model for characterization of immunity to EFTS.
Author (s): Koo, Ja Yong, 1970-
Advisor(s): Pommerenke, David
Department/Lab Affiliations: Electromagnetic Compatibility Laboratory
Issue Date: 2008
Publisher: Missouri University of Science and Technology
Citation: Koo, Jayong. "System and IC Level Analysis of Electrostatic Discharge (ESD) and Electrical Fast Transient (EFT) Immunity and Associated Coupling Mechanisms." Ph.D. Dissertation, Electrical Engineering, Missouri University of Science and Technology, 2008.
Abstract: "The exposure of electronic circuits to lightning, electrostatic discharge (ESD), electrical fast transients (EFT) or sine wave signals can reveal RF immunity problems. Typical problems include temporary malfunctions or permanent damage of integrated circuits (ICs). In an effort to reproduce those disturbances, a series of electromagnetic compatibility standards has been developed. However, a complete understanding of the root cause of the immunity problems has yet to be established. This dissertation discusses immunity problems in three papers, starting at the system level, via the coupling path into the IC"--Abstract, p. iv.
Type: Thesis/Dissertation
text
Copyright Notice: These materials are protected under copyright by the original author.
Link to this page:
http://scholarsmine.mst.edu/thesis/System_and_IC_level__09007dcc8055e8da.html
URL:
http://scholarsmine.mst.edu/thesis/pdf/Koo_09007dcc80557c11.pdf
Full Text:
Koo_09007dcc80557c11.pdf



titleSystem and IC level analysis of electrostatic discharge (ESD) and electrical fast transient (EFT) immunity and associated coupling mechanisms
title.alternativeCorrelation between EUT failure levels and ESD generator parameters.
title.alternativeFrequency domain measurement method for the analysis of ESD generators and coupling.
title.alternativeNon-linear [Greek character for mu]-controller power distribution network model for characterization of immunity to EFTS.
contributor.advisorPommerenke, David
contributor.authorKoo, Ja Yong, 1970-
contributor.deptlabElectromagnetic Compatibility Laboratory
subject.LCSHElectric discharges.
subject.LCSHElectric power system stability.
subject.LCSHElectromagnetic compatibility -- Standards.
date.issued2008
publisherMissouri University of Science and Technology
identifier.URI
http://scholarsmine.mst.edu/thesis/pdf/Koo_09007dcc80557c11.pdf
identifier.citationKoo, Jayong. "System and IC Level Analysis of Electrostatic Discharge (ESD) and Electrical Fast Transient (EFT) Immunity and Associated Coupling Mechanisms." Ph.D. Dissertation, Electrical Engineering, Missouri University of Science and Technology, 2008.
identifier.oclc244252067
descriptionVita.
descriptionThe entire thesis text is included in file.
descriptionTitle from title screen of thesis/dissertation PDF file (viewed August 21, 2008)
descriptionThesis (Ph. D.)--Missouri University of Science and Technology, 2008.
descriptionIncludes bibliographical references.
descriptionSystem requirements: Adobe Acrobat Reader; Internet browser.
descriptionMode of access: World Wide Web.
description.abstract"The exposure of electronic circuits to lightning, electrostatic discharge (ESD), electrical fast transients (EFT) or sine wave signals can reveal RF immunity problems. Typical problems include temporary malfunctions or permanent damage of integrated circuits (ICs). In an effort to reproduce those disturbances, a series of electromagnetic compatibility standards has been developed. However, a complete understanding of the root cause of the immunity problems has yet to be established. This dissertation discusses immunity problems in three papers, starting at the system level, via the coupling path into the IC"--Abstract, p. iv.
description.
statementOfResponsibility
by Ja Yong Koo.
typeThesis/Dissertation
type.DCMITypetext
rightsThese materials are protected under copyright by the original author.
language.ISO639-2eng
format.extentxiii, 102 p. : ill., digital, PDF file.
date.accessioned2008-08-14T14:30:10Z
date.available2008-08-21T21:35:06Z
identifier.persist.URI
http://scholarsmine.mst.edu/thesis/System_and_IC_level__09007dcc8055e8da.html
Full Text
Koo_09007dcc80557c11.pdf