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Title: Correlation between EUT failure levels and ESD generator parameters
Author (s): Koo, Jayong
Cai, Qing
Wang, Kai
Maas, J.
Takahashi, T.
Martwick, A.
Pommerenke, David
Department/Lab Affiliations: Center for Aerospace Manufacturing Technologies
Electrical and Computer Engineering
Electromagnetic Compatibility Laboratory
Keywords: electronic equipment testing
electrostatic discharge
Issue Date: 2008-11
Publisher: Institute of Electrical and Electronics Engineers IEEE
Citation: Koo, Jayong, Q. Cai, K. Wang, J. Maas, T. Takahashi , A. Martwick, D. Pommerenke. "Correlation between EUT failure levels and ESD generator parameters." IEEE Transactions on Electromagnetic Compatibility, vol.50, no.4, Nov. 2008, 794-801
Abstract: Some system-level electrostatic discharge (ESD) tests repeat badly if different ESD generators are used. For improving repeatability, ESD generator specifications have been changed, and modified generators have been compared in a worldwide round robin test. The test showed up to 1 : 3 variations of failure levels. Multiple parameters that characterize ESD generators have been measured. This paper correlates the parameters to test result variations trying to distinguish between important and nonrelevant parameters. The transient fields show large variations among different ESD generators. A correlation has been observed in many equipment under tests (EUTs) between failure levels and the spectral content of the voltage induced in a semicircular loop. EUT resonance enhances the field coupling, and is the dominate failure mechanism. The regulation on the transient field is expected to improve the test repeatability.
Type: Article - Conference proceedings
text
In Title: Transactions on Electromagnetic Compatibility
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titleCorrelation between EUT failure levels and ESD generator parameters
contributor.authorKoo, Jayong
contributor.authorCai, Qing
contributor.authorWang, Kai
contributor.authorMaas, J.
contributor.authorTakahashi, T.
contributor.authorMartwick, A.
contributor.authorPommerenke, David
contributor.deptlabCenter for Aerospace Manufacturing Technologies
contributor.deptlabElectrical and Computer Engineering
contributor.deptlabElectromagnetic Compatibility Laboratory
subjectelectronic equipment testing
subjectelectrostatic discharge
date.issued2008-11
publisherInstitute of Electrical and Electronics Engineers IEEE
identifier.citationKoo, Jayong, Q. Cai, K. Wang, J. Maas, T. Takahashi , A. Martwick, D. Pommerenke. "Correlation between EUT failure levels and ESD generator parameters." IEEE Transactions on Electromagnetic Compatibility, vol.50, no.4, Nov. 2008, 794-801
identifier.pub.URI
http://dx.doi.org/10.1109/TEMC.2008.2005403
description.abstractSome system-level electrostatic discharge (ESD) tests repeat badly if different ESD generators are used. For improving repeatability, ESD generator specifications have been changed, and modified generators have been compared in a worldwide round robin test. The test showed up to 1 : 3 variations of failure levels. Multiple parameters that characterize ESD generators have been measured. This paper correlates the parameters to test result variations trying to distinguish between important and nonrelevant parameters. The transient fields show large variations among different ESD generators. A correlation has been observed in many equipment under tests (EUTs) between failure levels and the spectral content of the voltage induced in a semicircular loop. EUT resonance enhances the field coupling, and is the dominate failure mechanism. The regulation on the transient field is expected to improve the test repeatability.
typeArticle - Conference proceedings
type.DCMITypetext
type.statusFinal version
relation.isPartOfTransactions on Electromagnetic Compatibility
rightsThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
rightscan upload final version
rights.URI
http://www.ieee.org/web/publications/rights/policies.html
rights.URI
http://www.ieee.org/portal/cms_docs_iportals/iportals/publications/rights/downloads/IEEECForm121302pdf.pdf
rights.URI
http://www.ieee.org/web/publications/rights/index.html
date.accessioned2009-01-14T22:56:56Z
date.available2009-01-22T14:49:44Z
identifier.persist.URI
http://scholarsmine.mst.edu/post_prints/CorrelationBetweenEUTFailureLevelsAndESDGene_09007dcc805e2095.html
Full Text
Koo_09007dcc805e20bb.pdf