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Title: 0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output
Author (s): Krishnamurthy, K.
Chow, J.
Rodwell, M.J.W.
Pullela, R.
Department/Lab Affiliations: Mechanical & Aerospace Engineering
Keywords: 0.1 to 42 GHz
35 dB
42 GHz
III-V semiconductors
InP
InP DHBT distributed amplifiers
MMIC power amplifiers
bipolar MIMIC
broadband power amplifier
distributed amplifiers
distributed output
distributed power amplifier MMIC
double hetero-junction bipolar transistor
heterojunction bipolar transistors
indium compounds
lumped preamplifier
millimetre wave power amplifiers
single chip HBT amplifier
wideband amplifiers
Issue Date: 2003
Publisher: Institute of Electrical and Electronics Engineers
Citation: Krishnamurthy, K.; Chow, J.; Rodwell, M.J.W.; Pullela, R. "0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output" Electronics Letters, Vol.39, Iss.22, 30 Oct. 2003 Pages: 1594- 1595
Abstract: An InP double hetero-junction bipolar transistor (DHBT) distributed power amplifier MMIC with 35 dB gain, 42 GHz bandwidth and 15 dBm output power is reported. This represents the highest power and largest gain reported over this bandwidth from a single chip HBT amplifier. A lumped preamplifier with a novel distributed output is used to obtain high gain and wide bandwidth at these power levels.
Type: Article - Journal
text
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title0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output
contributor.authorKrishnamurthy, K.
contributor.authorChow, J.
contributor.authorRodwell, M.J.W.
contributor.authorPullela, R.
contributor.deptlabMechanical & Aerospace Engineering
subject0.1 to 42 GHz
subject35 dB
subject42 GHz
subjectIII-V semiconductors
subjectInP
subjectInP DHBT distributed amplifiers
subjectMMIC power amplifiers
subjectbipolar MIMIC
subjectbroadband power amplifier
subjectdistributed amplifiers
subjectdistributed output
subjectdistributed power amplifier MMIC
subjectdouble hetero-junction bipolar transistor
subjectheterojunction bipolar transistors
subjectindium compounds
subjectlumped preamplifier
subjectmillimetre wave power amplifiers
subjectsingle chip HBT amplifier
subjectwideband amplifiers
date.issued2003
date.submitted2007
publisherInstitute of Electrical and Electronics Engineers
identifier.citationKrishnamurthy, K.; Chow, J.; Rodwell, M.J.W.; Pullela, R. "0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output" Electronics Letters, Vol.39, Iss.22, 30 Oct. 2003 Pages: 1594- 1595
identifier.issn0013-5194
identifier.pub.URI
http://ieeexplore.ieee.org/iel5/2220/27875/01244114.pdf?arnumber=124411
description.abstractAn InP double hetero-junction bipolar transistor (DHBT) distributed power amplifier MMIC with 35 dB gain, 42 GHz bandwidth and 15 dBm output power is reported. This represents the highest power and largest gain reported over this bandwidth from a single chip HBT amplifier. A lumped preamplifier with a novel distributed output is used to obtain high gain and wide bandwidth at these power levels.
typeArticle - Journal
type.DCMITypetext
type.statusFinal version
type.statusFinal version
rightsThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
rights.URI
http://www.ieee.org/web/publications/rights/policies.html
date.accessioned2007-04-05T14:18:14Z
date.available2007-04-05T14:18:14Z
identifier.persist.URI
http://scholarsmine.mst.edu/post_prints/01244114_09007dcc8030d019.html
Full Text
01244114_09007dcc8030d01e.pdf