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Title: Radiation resistance testing of MOSFET and CMOS as a means of risk management
Author (s): Tokuhiro, A.T.
Bertino, Massimo
Department/Lab Affiliations: Physics
Keywords: CMOS
CMOS integrated circuits
MOSFET
MOSFET
integrated circuit testing
ionizing radiation
radiation environment
radiation hardening (electronics)
radiation resistance testing
radiation-induced damage
risk management
risk management
safety factor margins
semiconductor device testing
test
Issue Date: 2002
Publisher: Institute of Electrical and Electronics Engineers
Citation: Tokuhiro, A.T.; Bertino, M.F. "Radiation resistance testing of MOSFET and CMOS as a means of risk management" IEEE Transactions on Components and Packaging Technologies [see also Part A: Packaging Technologies, IEEE Transactions on Components, Packaging and Manufacturing Technology], Vol.25, Iss.3, Sep 2002 Pages: 519- 522
Abstract: Whether for military, research (space, accelerator physics) and/or civilian use, risk avoidance against radiation-induced damage is not possible with COTS parts. Thus the sensible approach is risk management. We recommend a sensible risk management approach as follows: 1) know the radiation environment of the intended application to the extent possible; 2) know the effects of ionizing radiation on the component(s) of interest; 3) know the requirements of the application; 4) identify the candidate or chosen components; 5) test the components; 6) design-in safety factor margins to the extent possible.
Type: Article - Journal
text
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titleRadiation resistance testing of MOSFET and CMOS as a means of risk management
contributor.authorTokuhiro, A.T.
contributor.authorBertino, Massimo
contributor.deptlabPhysics
subjectCMOS
subjectCMOS integrated circuits
subjectMOSFET
subjectMOSFET
subjectintegrated circuit testing
subjectionizing radiation
subjectradiation environment
subjectradiation hardening (electronics)
subjectradiation resistance testing
subjectradiation-induced damage
subjectrisk management
subjectrisk management
subjectsafety factor margins
subjectsemiconductor device testing
subjecttest
date.issued2002
date.submitted2007
publisherInstitute of Electrical and Electronics Engineers
identifier.citationTokuhiro, A.T.; Bertino, M.F. "Radiation resistance testing of MOSFET and CMOS as a means of risk management" IEEE Transactions on Components and Packaging Technologies [see also Part A: Packaging Technologies, IEEE Transactions on Components, Packaging and Manufacturing Technology], Vol.25, Iss.3, Sep 2002 Pages: 519- 522
identifier.issn1521-3331
identifier.pub.URI
http://ieeexplore.ieee.org/iel5/6144/25974/01159191.pdf?arnumber=115919
description.abstractWhether for military, research (space, accelerator physics) and/or civilian use, risk avoidance against radiation-induced damage is not possible with COTS parts. Thus the sensible approach is risk management. We recommend a sensible risk management approach as follows: 1) know the radiation environment of the intended application to the extent possible; 2) know the effects of ionizing radiation on the component(s) of interest; 3) know the requirements of the application; 4) identify the candidate or chosen components; 5) test the components; 6) design-in safety factor margins to the extent possible.
typeArticle - Journal
type.DCMITypetext
type.statusFinal version
rightsThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
rights.URI
http://www.ieee.org/web/publications/rights/policies.html
date.accessioned2007-04-05T14:15:34Z
date.available2007-04-05T14:15:34Z
identifier.persist.URI
http://scholarsmine.mst.edu/post_prints/01159191_09007dcc8030cce2.html
Full Text
01159191_09007dcc8030cce7.pdf