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| Title: | Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks | |
| Author (s): | Cao, H. Fang, W. Xu, J.Y. Yamilov, Alexey Ma, Y. Ho, S.T. Solomon, G.S. | |
| Department/Lab Affiliations: | Physics | |
| Keywords: | III-V semiconductors InAs-GaAs cavity resonances embedded in microdisks emission intensity indium compounds inhomogeneous broadening microcavities photoluminescence photoluminescence curves quantum dots radiative lifetimes semiconductor quantum dots spontaneous emission spontaneous emission rates enhancement temporal decay truncated singular value decomposition whispering gallery modes | |
| Issue Date: | 2002 | |
| Publisher: | Institute of Electrical and Electronics Engineers | |
| Citation: | Cao, H.; Fang, W.; Xu, J.Y.; Yamilov, A.; Ma, Y.; Ho, S.T.; Solomon, G.S. "Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks" QELS '02. Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 2002. Pages: 56 | |
| Abstract: | Control of spontaneous emission in a microcavity has many important applications, e.g. improvement of the efficiency of light emitting devices. InAs quantum dots (QDs) embedded in microdisks are ideal systems for spontaneous emission control. The whispering gallery (WG) modes of microdisks have low volume and high quality factor. The homogeneous linewidth of InAs quantum dots is smaller than the spectral width of WG modes. Thus, a large enhancement of the spontaneous emission rates should be expected for QDs coupled to WG modes. However, large inhomogeneous broadening of the QD energy levels and random spatial distribution of the QDs in a microdisk lead to a broad distribution of the spontaneous emission rates. Using an efficient regularized method based on the truncated singular value decomposition and the non-negative constraints, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10. | |
| Type: | Article - Conference proceedings text | |
| Copyright Notice: | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. FULL COPYRIGHT INFORMATION: | |
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| title | Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks | |
| contributor.author | Cao, H. | |
| contributor.author | Fang, W. | |
| contributor.author | Xu, J.Y. | |
| contributor.author | Yamilov, Alexey | |
| contributor.author | Ma, Y. | |
| contributor.author | Ho, S.T. | |
| contributor.author | Solomon, G.S. | |
| contributor.deptlab | Physics | |
| subject | III-V semiconductors | |
| subject | InAs-GaAs | |
| subject | cavity resonances | |
| subject | embedded in microdisks | |
| subject | emission intensity | |
| subject | indium compounds | |
| subject | inhomogeneous broadening | |
| subject | microcavities | |
| subject | photoluminescence | |
| subject | photoluminescence curves | |
| subject | quantum dots | |
| subject | radiative lifetimes | |
| subject | semiconductor quantum dots | |
| subject | spontaneous emission | |
| subject | spontaneous emission rates enhancement | |
| subject | temporal decay | |
| subject | truncated singular value decomposition | |
| subject | whispering gallery modes | |
| date.issued | 2002 | |
| date.submitted | 2007 | |
| publisher | Institute of Electrical and Electronics Engineers | |
| identifier.citation | Cao, H.; Fang, W.; Xu, J.Y.; Yamilov, A.; Ma, Y.; Ho, S.T.; Solomon, G.S. "Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks" QELS '02. Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 2002. Pages: 56 | |
| identifier.pub.URI | ||
| description.abstract | Control of spontaneous emission in a microcavity has many important applications, e.g. improvement of the efficiency of light emitting devices. InAs quantum dots (QDs) embedded in microdisks are ideal systems for spontaneous emission control. The whispering gallery (WG) modes of microdisks have low volume and high quality factor. The homogeneous linewidth of InAs quantum dots is smaller than the spectral width of WG modes. Thus, a large enhancement of the spontaneous emission rates should be expected for QDs coupled to WG modes. However, large inhomogeneous broadening of the QD energy levels and random spatial distribution of the QDs in a microdisk lead to a broad distribution of the spontaneous emission rates. Using an efficient regularized method based on the truncated singular value decomposition and the non-negative constraints, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10. | |
| type | Article - Conference proceedings | |
| type.DCMIType | text | |
| type.status | Final version | |
| rights | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | |
| rights.URI | ||
| date.accessioned | 2007-04-05T14:14:13Z | |
| date.available | 2007-04-05T14:14:12Z | |
| identifier.persist.URI | ||
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