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Title: A novel thin film transistor using double amorphous silicon active layer
Author (s): Jong Hyun Choi
Kim, Chang-Soo
Byung Cheon Lim
Jin Jang
Department/Lab Affiliations: Biological Sciences
Electrical and Computer Engineering
Intelligent Microsystem Laboratory
Keywords: Si:H,Cl-Si:H
amorphous semiconductors
double amorphous silicon stacked active layer
elemental semiconductors
leakage currents
off-state photo-leakage current
silicon
thin film transistor
thin film transistors
Issue Date: 1998
Publisher: Institute of Electrical and Electronics Engineers
Citation: Jong Hyun Choi; Chang Soo Kim; Byung Cheon Lim; Jin Jang, "A novel thin film transistor using double amorphous silicon active layer," IEEE Transactions on Electron Devices, vol.45, no.9 pp.2074-2076, Sep 1998
Abstract: We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT.
Type: Article - Journal
text
Copyright Notice: This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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titleA novel thin film transistor using double amorphous silicon active layer
contributor.authorJong Hyun Choi
contributor.authorKim, Chang-Soo
contributor.authorByung Cheon Lim
contributor.authorJin Jang
contributor.deptlabBiological Sciences
contributor.deptlabElectrical and Computer Engineering
contributor.deptlabIntelligent Microsystem Laboratory
subjectSi:H,Cl-Si:H
subjectamorphous semiconductors
subjectdouble amorphous silicon stacked active layer
subjectelemental semiconductors
subjectleakage currents
subjectoff-state photo-leakage current
subjectsilicon
subjectthin film transistor
subjectthin film transistors
date.issued1998
date.submitted2007
publisherInstitute of Electrical and Electronics Engineers
identifier.citationJong Hyun Choi; Chang Soo Kim; Byung Cheon Lim; Jin Jang, "A novel thin film transistor using double amorphous silicon active layer," IEEE Transactions on Electron Devices, vol.45, no.9 pp.2074-2076, Sep 1998
identifier.issn0018-9383
identifier.pub.URI
http://ieeexplore.ieee.org/iel4/16/15420/00711377.pdf?arnumber=71137
description.abstractWe have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT.
typeArticle - Journal
type.DCMITypetext
type.statusFinal version
rightsThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
rights.URI
http://www.ieee.org/web/publications/rights/policies.html
date.accessioned2007-04-05T14:04:15Z
date.available2007-04-05T14:04:15Z
identifier.persist.URI
http://scholarsmine.mst.edu/post_prints/00711377_09007dcc8030c203.html
Full Text
00711377_09007dcc8030c208.pdf