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| Title: | A novel thin film transistor using double amorphous silicon active layer | |
| Author (s): | Jong Hyun Choi Kim, Chang-Soo Byung Cheon Lim Jin Jang | |
| Department/Lab Affiliations: | Biological Sciences Electrical and Computer Engineering Intelligent Microsystem Laboratory | |
| Keywords: | Si:H,Cl-Si:H amorphous semiconductors double amorphous silicon stacked active layer elemental semiconductors leakage currents off-state photo-leakage current silicon thin film transistor thin film transistors | |
| Issue Date: | 1998 | |
| Publisher: | Institute of Electrical and Electronics Engineers | |
| Citation: | Jong Hyun Choi; Chang Soo Kim; Byung Cheon Lim; Jin Jang, "A novel thin film transistor using double amorphous silicon active layer," IEEE Transactions on Electron Devices, vol.45, no.9 pp.2074-2076, Sep 1998 | |
| Abstract: | We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT. | |
| Type: | Article - Journal text | |
| Copyright Notice: | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. FULL COPYRIGHT INFORMATION: | |
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| title | A novel thin film transistor using double amorphous silicon active layer | |
| contributor.author | Jong Hyun Choi | |
| contributor.author | Kim, Chang-Soo | |
| contributor.author | Byung Cheon Lim | |
| contributor.author | Jin Jang | |
| contributor.deptlab | Biological Sciences | |
| contributor.deptlab | Electrical and Computer Engineering | |
| contributor.deptlab | Intelligent Microsystem Laboratory | |
| subject | Si:H,Cl-Si:H | |
| subject | amorphous semiconductors | |
| subject | double amorphous silicon stacked active layer | |
| subject | elemental semiconductors | |
| subject | leakage currents | |
| subject | off-state photo-leakage current | |
| subject | silicon | |
| subject | thin film transistor | |
| subject | thin film transistors | |
| date.issued | 1998 | |
| date.submitted | 2007 | |
| publisher | Institute of Electrical and Electronics Engineers | |
| identifier.citation | Jong Hyun Choi; Chang Soo Kim; Byung Cheon Lim; Jin Jang, "A novel thin film transistor using double amorphous silicon active layer," IEEE Transactions on Electron Devices, vol.45, no.9 pp.2074-2076, Sep 1998 | |
| identifier.issn | 0018-9383 | |
| identifier.pub.URI | ||
| description.abstract | We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT. | |
| type | Article - Journal | |
| type.DCMIType | text | |
| type.status | Final version | |
| rights | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | |
| rights.URI | ||
| date.accessioned | 2007-04-05T14:04:15Z | |
| date.available | 2007-04-05T14:04:15Z | |
| identifier.persist.URI | ||
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