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| Title: | The influence of PCl 3 on planarisation and selectivity of InP regrowth by atmospheric pressure MOVPE | |
| Author (s): | Harlow, M.J. Spurdens, P.C. Moss, Randy Hays | |
| Department/Lab Affiliations: | Electrical and Computer Engineering Image Processing Laboratory | |
| Keywords: | AP-MOVPE growth III-V semiconductors InP PCl 3 PCl 3 influence [100] direction growth suppression [311] direction growth enhancement atmospheric pressure MOVPE dielectric masks indium compounds mesa structures planar regrowth polycrystalline deposit suppression regrowth planarisation regrowth selectivity scanning electron microscopy semiconductor growth surface structure vapour phase epitaxial growth | |
| Issue Date: | 1995 | |
| Publisher: | Institute of Electrical and Electronics Engineers | |
| Citation: | Harlow, M.J.; Spurdens, P.C.; Moss, R.H., "The influence of PCl_3 on planarisation and selectivity of InP regrowth by atmospheric pressure MOVPE," Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials, 1995. pp.329-332, 9-13 May 1995 | |
| Abstract: | The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed | |
| Type: | Article - Conference proceedings text | |
| Copyright Notice: | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. FULL COPYRIGHT INFORMATION: | |
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| title | The influence of PCl 3 on planarisation and selectivity of InP regrowth by atmospheric pressure MOVPE | |
| contributor.author | Harlow, M.J. | |
| contributor.author | Spurdens, P.C. | |
| contributor.author | Moss, Randy Hays | |
| contributor.deptlab | Electrical and Computer Engineering | |
| contributor.deptlab | Image Processing Laboratory | |
| subject | AP-MOVPE growth | |
| subject | III-V semiconductors | |
| subject | InP | |
| subject | PCl 3 | |
| subject | PCl 3 influence | |
| subject | [100] direction growth suppression | |
| subject | [311] direction growth enhancement | |
| subject | atmospheric pressure MOVPE | |
| subject | dielectric masks | |
| subject | indium compounds | |
| subject | mesa structures | |
| subject | planar regrowth | |
| subject | polycrystalline deposit suppression | |
| subject | regrowth planarisation | |
| subject | regrowth selectivity | |
| subject | scanning electron microscopy | |
| subject | semiconductor growth | |
| subject | surface structure | |
| subject | vapour phase epitaxial growth | |
| date.issued | 1995 | |
| date.submitted | 2007 | |
| publisher | Institute of Electrical and Electronics Engineers | |
| identifier.citation | Harlow, M.J.; Spurdens, P.C.; Moss, R.H., "The influence of PCl_3 on planarisation and selectivity of InP regrowth by atmospheric pressure MOVPE," Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials, 1995. pp.329-332, 9-13 May 1995 | |
| identifier.pub.URI | ||
| description.abstract | The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed | |
| type | Article - Conference proceedings | |
| type.DCMIType | text | |
| type.status | Final version | |
| rights | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | |
| rights.URI | ||
| date.accessioned | 2007-04-05T14:00:35Z | |
| date.available | 2007-04-05T14:00:34Z | |
| identifier.persist.URI | ||
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