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Title: A bipartite, differential I DDQ testable static RAM design
Author (s): Al-Assadi, Waleed K.
Jayasumana, A.P.
Malaiya, Y.K.
Department/Lab Affiliations: Electrical and Computer Engineering
Keywords: SRAM
SRAM chips
accuracy
bipartite differential I/DDQ/ testable static RAM design
current testing
defect detection
fault activation
fault diagnosis
fault location
high-density IC fault detection
integrated circuit testing
memory partitioning
off-line testing
parallel write/read operations
quiescent power supply current measurement
static random access memories
system operational speed
test speed
testability
Issue Date: 1995
Publisher: Institute of Electrical and Electronics Engineers
Citation: Al-Assadi, W.K.; Jayasumana, A.P.; Malaiya, Y.K., "A bipartite, differential IDDQ testable static RAM design," Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing, 1995. pp.36-41, 7-8 Aug 1995
Abstract: I DDQ (Defect Detection by Quiescent power supply current measurement), or current testing, has emerged in the last few years as an effective technique for detecting certain classes of faults in high-density ICs. In this paper, a testable design that enhances the I DDQ testability of static random access memories (SRAMs) for off-line testing as proposed. To achieve high accuracy and a test speed approaching the system operational speed, the memory is partitioned for comparison of I DDQ values. Parallel write/read operations are used to activate possible faults, while quiescent power supply currents from two blocks are compared
Type: Article - Conference proceedings
text
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titleA bipartite, differential I DDQ testable static RAM design
contributor.authorAl-Assadi, Waleed K.
contributor.authorJayasumana, A.P.
contributor.authorMalaiya, Y.K.
contributor.deptlabElectrical and Computer Engineering
subjectSRAM
subjectSRAM chips
subjectaccuracy
subjectbipartite differential I/DDQ/ testable static RAM design
subjectcurrent testing
subjectdefect detection
subjectfault activation
subjectfault diagnosis
subjectfault location
subjecthigh-density IC fault detection
subjectintegrated circuit testing
subjectmemory partitioning
subjectoff-line testing
subjectparallel write/read operations
subjectquiescent power supply current measurement
subjectstatic random access memories
subjectsystem operational speed
subjecttest speed
subjecttestability
date.issued1995
date.submitted2007
publisherInstitute of Electrical and Electronics Engineers
identifier.citationAl-Assadi, W.K.; Jayasumana, A.P.; Malaiya, Y.K., "A bipartite, differential IDDQ testable static RAM design," Records of the 1995 IEEE International Workshop on Memory Technology, Design and Testing, 1995. pp.36-41, 7-8 Aug 1995
identifier.pub.URI
http://ieeexplore.ieee.org/iel3/3963/11445/00518079.pdf?arnumber=51807
description.abstractI DDQ (Defect Detection by Quiescent power supply current measurement), or current testing, has emerged in the last few years as an effective technique for detecting certain classes of faults in high-density ICs. In this paper, a testable design that enhances the I DDQ testability of static random access memories (SRAMs) for off-line testing as proposed. To achieve high accuracy and a test speed approaching the system operational speed, the memory is partitioned for comparison of I DDQ values. Parallel write/read operations are used to activate possible faults, while quiescent power supply currents from two blocks are compared
typeArticle - Conference proceedings
type.DCMITypetext
type.statusFinal version
rightsThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
rights.URI
http://www.ieee.org/web/publications/rights/policies.html
date.accessioned2007-04-05T14:00:26Z
date.available2007-04-05T14:00:25Z
identifier.persist.URI
http://scholarsmine.mst.edu/post_prints/00518079_09007dcc8030be4a.html
Full Text
00518079_09007dcc8030be4f.pdf