At present most theoretical studies of atomic clusters are limited to their physical properties referred to 0 K. To the best of our knowledge, there exists no theoretical study of the simultaneous dependence of cluster formation and cluster-size distributions on both pressure and temperature. In the present work both pressure and temperature effects on the formation of silicon clusters are explored. A universal semiempirical formula is obtained to show a general trend in the variation of binding energy as a function of cluster size for both atomic and molecular clusters.
S. S. Salk et al., "Pressure and Temperature Effects on the Energy of Formation for Silicon Clusters," Physical Review B, vol. 45, no. 3, pp. 1458-1461, American Institute of Physics (AIP), Jan 1992.
The definitive version is available at http://dx.doi.org/10.1103/PhysRevB.45.1458
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© 1992 American Institute of Physics (AIP), All rights reserved.