Controlling the Spin Texture of Topological Insulators by Rational Design of Organic Molecules
We present a rational design approach to customize the spin texture of surface states of a topological insulator. This approach relies on the extreme multifunctionality of organic molecules that are used to functionalize the surface of the prototypical topological insulator (TI) Bi2Se3. For the rational design we use theoretical calculations to guide the choice and chemical synthesis of appropriate molecules that customize the spin texture of Bi2Se3. The theoretical predictions are then verified in angular-resolved photoemission experiments. We show that, by tuning the strength of molecule-TI interaction, the surface of the TI can be passivated, the Dirac point can energetically be shifted at will, and Rashba-split quantum-well interface states can be created. These tailored interface properties-passivation, spin-texture tuning, and creation of hybrid interface states-lay a solid foundation for interface-assisted molecular spintronics in spin-textured materials.
S. Jakobs and A. Narayan and B. Stadtmuller and A. Droghetti and I. Rungger and Y. S. Hor and S. V. Klyatskaya and D. Jungkenn and J. Stockl and M. Laux and O. L. Monti and M. Aeschlimann and R. J. Cava and S. Mathias and S. Sanvito and M. Cinchetti, "Controlling the Spin Texture of Topological Insulators by Rational Design of Organic Molecules," Nano Letters, vol. 15, no. 9, pp. 6022-6029, American Chemical Society (ACS), Sep 2015.
The definitive version is available at http://dx.doi.org/10.1021/acs.nanolett.5b02213
Keywords and Phrases
Electric Insulators; Hybrid Materials; Interfaces (Materials); Molecules; Passivation; Quantum Theory; Semiconductor Quantum Wells; Synthesis (Chemical); Molecular Spintronics; Multifunctionality; Organic Molecules; Organic/Inorganic Interfaces; Quantum Well Interfaces; Spin Textures; Theoretical Calculations; Topological Insulators; Interface States
International Standard Serial Number (ISSN)
Article - Journal
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