Title

Magnetic Proximity Effect As a Pathway to Spintronic Applications of Topological Insulators

Abstract

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence 1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K, 3 well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi2-xMnxTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

Department(s)

Physics

Keywords and Phrases

Fault-tolerant; Magnetic Proximity; Operating Condition; Spin Coherence; Spin-based Electronics; Spintronic Applications; Spintronic Device; Topological Insulators; X-ray Magnetic Circular Dichroism; Electric Insulators; Magnetic Storage; Manganese; Spectroscopy; Ferromagnetism

International Standard Serial Number (ISSN)

1530-6984

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 American Chemical Society (ACS), All rights reserved.

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