Magnetic Proximity Effect As a Pathway to Spintronic Applications of Topological Insulators

Author

Ivana Vobornik
Unnikrishnan Manju
J. Fujii
Francesco Borgatti
Piero Torelli
Damjan Krizmancic
Yew San Hor, Missouri University of Science and TechnologyFollow
Robert Joseph Cava
Giancarlo C. Panaccione

Abstract

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence ^1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K, ³ well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi_2-xMn_xTe₃ by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

Recommended Citation

I. Vobornik et al., "Magnetic Proximity Effect As a Pathway to Spintronic Applications of Topological Insulators," Nano Letters, vol. 11, no. 10, pp. 4079 - 4082, American Chemical Society (ACS), Oct 2011.

The definitive version is available at https://doi.org/10.1021/nl201275q

Department(s)

Physics

Keywords and Phrases

Fault-tolerant; Magnetic Proximity; Operating Condition; Spin Coherence; Spin-based Electronics; Spintronic Applications; Spintronic Device; Topological Insulators; X-ray Magnetic Circular Dichroism; Electric Insulators; Magnetic Storage; Manganese; Spectroscopy; Ferromagnetism

International Standard Serial Number (ISSN)

1530-6984

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 American Chemical Society (ACS), All rights reserved.

Publication Date

01 Oct 2011