Title

The Low Temperature Thermoelectric Properties of CuxTiSe2-ySy

Abstract

The low temperature thermoelectric properties of TiSe2, co-doped with Cu and S, are reported. Partial S substitution for Se changes the magnitude of the indirect bandgap, while the Cu-doping independently controls the n-type carrier concentration. The Seebeck coefficients are negative, in the range of -50 to -200 μV K-1, and the resistivities are 0.1-10 mΩ cm. The thermal conductivity for the sample with the largest thermoelectric power factor was found to be relatively low, 3-4 W m-1 K-1, and decreases with decreasing temperature. The thermoelectric efficiencies for the best materials found in this system, typified by Cu0.02TiSe1.7S0.3, were largest at 0.07 at 300 K and decreased to 0.01 at 75 K.

Department(s)

Physics

Keywords and Phrases

Carrier Concentration; Charge Density; Charge Density Waves; Doping (Additives); Electric Power Factor; Thermal Conductivity; Thermal Insulating Materials; Thermoelectric Equipment; Thermoelectric Power; A. Electronic Materials; A. Layered Compounds; Band Gaps; Co-doped; Cu-doping; D. Charge-density Waves; D. Thermal Conductivity; Low Temperatures; Thermoelectric Efficiencies; Thermoelectric Power Factors; Thermoelectric Properties; Thermoanalysis

International Standard Serial Number (ISSN)

0025-5408

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2009 Elsevier, All rights reserved.

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