Hole Fermi Surface in Bi2Se3 Probed by Quantum Oscillations
Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi2Se3 crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between 0° and 90°, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross sections down to 24 meV. There is therefore no signature of a camelback in the valence band of our bulk samples, in accordance with the direct band gap predicted by GW calculations.
B. A. Piot et al., "Hole Fermi Surface in Bi2Se3 Probed by Quantum Oscillations," Physical Review B - Condensed Matter and Materials Physics, vol. 93, no. 15, American Physical Society, Apr 2016.
The definitive version is available at http://dx.doi.org/10.1103/PhysRevB.93.155206
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