Title

Chemically Gated Electronic Structure of a Superconducting Doped Topological Insulator System

Abstract

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

Meeting Name

10th International Conference on Materials and Mechanisms of Superconductivity (2012: Jul. 29-Aug. 3, Washington, DC)

Department(s)

Physics

Keywords and Phrases

Angle Resolved Photoemission Spectroscopy; Copper Atoms; Crystal Surfaces; Effect Of Chemicals; Electrical Field Strength; Majorana; Superconducting Properties; Topological Insulators; Electric Insulators; Electric Properties; Electronic Structure; Superconductivity

International Standard Serial Number (ISSN)

1742-6588

Document Type

Article - Conference proceedings

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2013 IOP Publishing, All rights reserved.

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