Chemically Gated Electronic Structure of a Superconducting Doped Topological Insulator System

Author

Lewis Andrew Wray
Suyang Xu
Madhab Neupane
Alexei V. Fedorov
Yew San Hor, Missouri University of Science and TechnologyFollow
Robert Joseph Cava
Md Zahid Hasan

Abstract

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu_xBi₂Se₃ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

Recommended Citation

L. A. Wray et al., "Chemically Gated Electronic Structure of a Superconducting Doped Topological Insulator System," Journal of Physics: Conference Series, vol. 449, no. 1, IOP Publishing, Jul 2013.

The definitive version is available at https://doi.org/10.1088/1742-6596/449/1/012037

Meeting Name

10th International Conference on Materials and Mechanisms of Superconductivity (2012: Jul. 29-Aug. 3, Washington, DC)

Department(s)

Physics

Keywords and Phrases

Angle Resolved Photoemission Spectroscopy; Copper Atoms; Crystal Surfaces; Effect Of Chemicals; Electrical Field Strength; Majorana; Superconducting Properties; Topological Insulators; Electric Insulators; Electric Properties; Electronic Structure; Superconductivity

International Standard Serial Number (ISSN)

1742-6588

Document Type

Article - Conference proceedings

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2013 IOP Publishing, All rights reserved.

Publication Date

01 Jul 2013