Abstract

We fabricated two-dimensional photonic crystal structures in zinc oxide films with focused-ion-beam etching. Lasing is realized in the near-ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing frequency and spatial profile of the lasing modes, as well as the photonic band structure calculation, we conclude that lasing occurs in the strongly localized defect modes near the edges of photonic band gap. These defect modes originate from the structure disorder unintentionally introduced during the fabrication process. ©2004 American Institute of Physics

Department(s)

Physics

Keywords and Phrases

II-VI Semiconductors; Photonic Band Gap; Semiconductor Thin Films; Sputter Etching; Wide Band Gap Semiconductors; Optical pumping; Photonic crystals; Semiconductor lasers; Zinc compounds

International Standard Serial Number (ISSN)

0003-6951

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2004 American Institute of Physics (AIP), All rights reserved.

Included in

Physics Commons

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