Abstract

Results of extensive density-functional studies provide direct evidence that Cr atoms in Cr:GaN have a strong tendency to form embedded clusters, occupying Ga sites. Significantly, for larger than 2-Cr-atom clusters, states containing antiferromagnetic coupling with net spin in the range 0.06-1.47 µB/Cr are favored. We propose a picture where various configurations coexist and the statistical distribution and associated magnetism will depend sensitively on the growth details. Such a view may elucidate many puzzling observations related to the structural and magnetic properties of III-N and other dilute semiconductors.

Department(s)

Physics

Sponsor(s)

Australian Research Council
United States. Defense Advanced Research Projects Agency

Keywords and Phrases

III-V Semiconductors; Density Functional Theory; Semimagnetic Semiconductors; Wide Band Gap Semiconductors; Antiferromagnetism; Chromium; Gallium compounds

International Standard Serial Number (ISSN)

0031-9007

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2005 American Physical Society (APS), All rights reserved.

Included in

Physics Commons

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