Abstract

First-principles investigations of the structural, electronic, and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal the possibility of efficient spin injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier. We demonstrate that Cr atoms segregate into the GaN region and that these interfaces retain their half-metallic behavior leading to a complete, i.e., 100%, spin polarization of the conduction electrons. This property makes the wide band-gap nitrides doped with Cr to be excellent candidates for high-efficiency magnetoelectronic devices.

Department(s)

Physics

Sponsor(s)

United States. Defense Advanced Research Projects Agency
National Science Foundation (U.S.)

Keywords and Phrases

III-V Semiconductors; Ab Initio Calculations; Magnetic Tunnelling; Semiconductor Heterojunctions; Spin Polarised Transport; Wide Band Gap Semiconductors; Aluminium compounds; Chromium; Ferromagnetic materials; Gallium compounds; Segregation

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2005 American Physical Society (APS), All rights reserved.

Included in

Physics Commons

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