By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs.




The scanning tunneling microscopy studies at Rutgers were supported by NSF Grant No. DMR-1506618. S.B.Z. was supported by U.S. Department of Energy (DOE) Grant No. DE-SC0002623. D.W. was supported by NSF Grant No. EFMA-1542789. Supercomputer time was provided by the CCNI at RPI and NERSC under DOE Contract No. DEAC02-05CH11231. Single-crystal synthesis work was supported by NSF Grant No. DMR-1255607.

Keywords and Phrases

Local Density of State; Point Defects; Quantum Anomalous Hall Effect; Topological Insulators

International Standard Serial Number (ISSN)

2469-9950; 2469-9969

Document Type

Article - Journal

Document Version

Final Version

File Type





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