Highly Polarized Emission in Spin Resolved Photoelectron Spectroscopy of Α-Fe(001)/GaAs(001)
Highly spin-polarized sources of electrons, integrated into device design, remain of great interest to the spintronic and magneto-electronic device community. Here, the growth of Fe upon GaAs(001) has been studied with photoelectron spectroscopy (PES), including Spin Resolved PES. Despite evidence of atomic level disorder such as intermixing, an over-layer with the spectroscopic signature of α-Fe(001), with a bcc real space ordering, is obtained. The results will be discussed in light of the possibility of using such films as a spin-polarized source in device applications.
S. W. Yu et al., "Highly Polarized Emission in Spin Resolved Photoelectron Spectroscopy of Α-Fe(001)/GaAs(001)," Surface Science, Elsevier, Aug 2010.
The definitive version is available at http://dx.doi.org/10.1016/j.susc.2010.04.024
Engineering and Physical Sciences Research Council
Lawrence Livermore National Laboratory
United States. Department of Energy
Keywords and Phrases
Semiconduction Gallium; Spin Dynamics; Atomic spectroscopy; Gallium alloys; Gallium arsenide; Photoelectricity; Photoionization
Article - Journal
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