Abstract

A theoretical approach for studying charge-carrier and energy diffusion due to long-range hopping in substitutionally disordered solids is presented. Unlike some earlier theories, which invoke a pair approximation to treat back-transfer processes, the current theory makes use of the exact solution to an appropriate single-defect problemone in which long-range jumps into, out of, and between both the defect site and all other active sites in the lattice are explicitly included. From this exact solution a new long-range effective-medium theory is constructed to describe the configurationally averaged transport properties of the disordered system.

Department(s)

Physics

International Standard Serial Number (ISSN)

0163-1829

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 1989 American Physical Society (APS), All rights reserved.

Included in

Physics Commons

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