Large Enhancement of Spontaneous Emission Rates of Inas Quantum Dots in GaAs Microdisks

Author

Wei Fang
Junying Xu
Alexey Yamilov, Missouri University of Science and TechnologyFollow
Hui Cao
Yong Ma
Glenn S. Solomon

Abstract

We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10.

Recommended Citation

W. Fang et al., "Large Enhancement of Spontaneous Emission Rates of Inas Quantum Dots in GaAs Microdisks," Optics Letters, vol. 27, no. 11, pp. 948 - 950, Optical Society of America (OSA), Jun 2002.

The definitive version is available at https://doi.org/10.1364/OL.27.000948

Department(s)

Physics

International Standard Serial Number (ISSN)

0146-9592

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2002 Optical Society of America (OSA), All rights reserved.

Publication Date

01 Jun 2002