We study the local states within the polariton band gap that arise due to deep defect centers with strong electron-phonon coupling. Electron transitions involving deep levels may result in alteration of local elastic constants. In this case, substantial reversible transformations of the impurity polariton density of states occur, which include the appearance/disappearance of the polariton impurity band, and its shift and/or the modification of its shape. These changes can be induced by thermo- and photoexcitation of the localized electron states or by trapping of injected charge carriers. We develop a simple model, which is applied to the Op center in GaP. Further possible experimental realizations of the effect are discussed.
M. G. Foygel et al., "Tunable Local Polariton Modes in Semiconductors," Physical Review B - Condensed Matter and Materials Physics, vol. 64, no. 11, pp. 1152031-1152036, American Physical Society (APS), Sep 2001.
The definitive version is available at http://dx.doi.org/10.1103/PhysRevB.64.115203
Keywords and Phrases
Gallium; Crystal; Elasticity; Electromagnetic Field; Electron; Mathematical Model; Semiconductor; Thermodynamics; Vibration
International Standard Serial Number (ISSN)
Article - Journal
© 2001 American Physical Society (APS), All rights reserved.