Title

Signal Readout in A-Si:H Pixel Detectors

Abstract

A switch consisting of two a-Si:H p-i diodes was studied to readout signal from pixels for the imaging of X-ray or gamma ray distributions. A charge storage time of 20 ms and a readout time of 0.7 µs were achieved. For the detection of single ionizing particles, polysilicon thin-film transistor amplifiers can be integrated to amplify the small signals at the pixel level before readout. Prototype polysilicon TFT amplifiers were designed and fabricated. The measured gain-bandwidth product was ~300 MHz and the input equivalent noise charge was ~1000 electrons for a 1-µs shaping time.

Meeting Name

IEEE Nuclear Science Symposium and Medical Imaging Conference (NAA/MIC 92)

Department(s)

Mining and Nuclear Engineering

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1993 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.


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