Title

Noise in A-Si:H P-I-N Detector Diodes

Editor(s)

Anders, A.

Abstract

Noise of a-Si:H p-i-n diodes (5 approximately 50 µm thick) under reverse bias was investigated. The current-dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts was the dominant noise source which was unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor of two, approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seemed to be a shaping time-independent noise component at zero biased diodes.

Meeting Name

1991 Nuclear Science Symposium and Medical Imaging Conference

Department(s)

Mining and Nuclear Engineering

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1992 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

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