Noise in A-Si:H P-I-N Detector Diodes
Noise of a-Si:H p-i-n diodes (5 approximately 50 µm thick) under reverse bias was investigated. The current-dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts was the dominant noise source which was unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor of two, approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seemed to be a shaping time-independent noise component at zero biased diodes.
G. Cho et al., "Noise in A-Si:H P-I-N Detector Diodes," IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers (IEEE), Jan 1992.
The definitive version is available at http://dx.doi.org/10.1109/23.159679
1991 Nuclear Science Symposium and Medical Imaging Conference
Mining and Nuclear Engineering
Article - Conference proceedings
© 1992 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.