Title

Radiation and High Temperature Effects in MOSFET

Abstract

A number of studies have been conducted in the past to model the behavior of MOSFET under both high temperature and irradiation conditions. The investigations were carried out to explore the possibility of salvaging irradiation-damaged n-channel and p-channel MOSFETs by proper annealing after irradiation. The MOSFETs were obtained from the Sandia National Laboratories. The first phase of the experiments consisted of obtaining device characteristics at elevated temperature (up to 200 C). In the second phase of experiments the devices were irradiated to a maximum dose of 10 Mrad (Si) using a Co-60 source. The devices were subsequently annealed at a temperature of 125 C for 48 hours to study annealing of the damage caused by irradiation. The results are reported

Meeting Name

Symposium on Space Nuclear Power systems

Department(s)

Mining and Nuclear Engineering

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1986 Institute for Space Nuclear Power Studies, All rights reserved.

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