Title

Thick Amorphous Silicon Layers Suitable for the Realization of Radiation Detectors

Abstract

Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH4 at a substrate temperature approx. 150°C and subsequent annealing at 160°C for about 100 hours. The stress in the films obtained this way decreased to approx. 100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 × 1015 cmˉ³ to 7 × 1014 cmˉ³ without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material.

Meeting Name

Proceedings of the 1995 MRS Spring Meeting

Department(s)

Mining and Nuclear Engineering

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1995 Cambridge University Press, All rights reserved.

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