Abstract

Preliminary evidence of enhanced etching of rhenium by XeF2 under the influence of an electric field (3.36 GV/m) is presented. Scanning electron microscope photographs of sharp rhenium tips show etching of at least 0.40 µm ±0.07 in 32 min at the point of maximum electric field, indicating a field enhanced etching rate of 13 nm/min ±2. A control experiment shows a maximum spontaneous etching of rhenium by XeF2 of 0.1 µm ±0.07 in 30 min, indicating a maximum possible spontaneous etching rate of rhenium by XeF2 of 3 nm/min ±2. The spontaneous rate of tungsten by XeF2 reported in the literature is 0.2 nm/min.

Department(s)

Mining and Nuclear Engineering

Sponsor(s)

Oak Ridge National Laboratory
United States. Department of Energy

Keywords and Phrases

Etching; Refractories; Rhenium; Xenon Compounds

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2008 American Institute of Physics (AIP), All rights reserved.

Share

 
COinS