Flat-Band Voltage Shift in Metal-Gate/High-K/Si Stacks
In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (Vfb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (Vfb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described. © 2011 Chinese Physical Society and IOP Publishing Ltd.
A. Huang et al., "Flat-Band Voltage Shift in Metal-Gate/High-K/Si Stacks," Chinese Physics B, Institute of Physics - IOP Publishing, Jan 2011.
The definitive version is available at http://dx.doi.org/10.1088/1674-1056/20/9/097303
Mechanical and Aerospace Engineering
Keywords and Phrases
Flat-Band Voltage Shift; High-K Dielectrics; Metal Gate; Vfb Roll-Off
Article - Journal
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