Flat-Band Voltage Shift in Metal-Gate/High-K/Si Stacks
Abstract
In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (Vfb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (Vfb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described. © 2011 Chinese Physical Society and IOP Publishing Ltd.
Recommended Citation
A. Huang et al., "Flat-Band Voltage Shift in Metal-Gate/High-K/Si Stacks," Chinese Physics B, Institute of Physics - IOP Publishing, Jan 2011.
The definitive version is available at https://doi.org/10.1088/1674-1056/20/9/097303
Department(s)
Mechanical and Aerospace Engineering
Keywords and Phrases
Flat-Band Voltage Shift; High-K Dielectrics; Metal Gate; Vfb Roll-Off
International Standard Serial Number (ISSN)
1674-1056
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2011 Institute of Physics - IOP Publishing, All rights reserved.
Publication Date
01 Jan 2011
