Very High Channel Conductivity in Low-Defect AIN/GaN High Electron Mobility Transistor Structures
Abstract
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm²/V s) and sheet charge density (>3 x 10¹³ cmˉ²) , were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ~100Ω/□ at room temperature. Fabricated 1.2 µm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ~1.3 A/mm and a peak transconductance of ~260 mS/mm . Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented.
Recommended Citation
A. M. Dabiran et al., "Very High Channel Conductivity in Low-Defect AIN/GaN High Electron Mobility Transistor Structures," Applied Physics Letters, American Institute of Physics (AIP), Jan 2008.
The definitive version is available at https://doi.org/10.1063/1.2970991
Department(s)
Mechanical and Aerospace Engineering
Keywords and Phrases
III-V Semiconductors; AIN Films; MODEFETs; Sapphire; Semiconductor Growth; Molecular Beam Epitaxy; Electron Gas; Thin Film Growth; Interface Roughness; Metal Organic Chemical Vapor Deposition
International Standard Serial Number (ISSN)
0003-6951
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2008 American Institute of Physics (AIP), All rights reserved.
Publication Date
01 Jan 2008
