Title

Very High Channel Conductivity in Low-Defect AIN/GaN High Electron Mobility Transistor Structures

Abstract

Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm²/V s) and sheet charge density (>3 x 10¹³ cmˉ²) , were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ~100Ω/□ at room temperature. Fabricated 1.2 µm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ~1.3 A/mm and a peak transconductance of ~260 mS/mm . Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented.

Department(s)

Mechanical and Aerospace Engineering

Keywords and Phrases

III-V Semiconductors; AIN Films; MODEFETs; Sapphire; Semiconductor Growth; Molecular Beam Epitaxy; Electron Gas; Thin Film Growth; Interface Roughness; Metal Organic Chemical Vapor Deposition

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2008 American Institute of Physics (AIP), All rights reserved.

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