Title

The Advantage of Blue InGaN Multiple Quantum Wells Light-Emitting Diodes with P-AlInN Electron Blocking Layer

Abstract

InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs). © 2011 Chinese Physical Society and IOP Publishing Ltd.

Department(s)

Mechanical and Aerospace Engineering

Keywords and Phrases

AlInN; Electron Blocking Layer; GaN-Based Light-Emitting Diodes

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 Institute of Physics - IOP Publishing, All rights reserved.

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