Title

Simulation Study of Blue InGaN Multiple Quantum Well Light-Emitting Diodes with Different Hole Injection Layers

Abstract

InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-AlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency. © 2012 Chinese Physical Society and IOP Publishing Ltd.

Department(s)

Mechanical and Aerospace Engineering

Keywords and Phrases

GaN-Based Light-Emitting Diodes; Hole Injection Layer; Injection Efficiency

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2012 Institute of Physics - IOP Publishing, All rights reserved.


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