NFET Effective Work Function Improvement Via Stress Memorization Technique in Replacement Metal Gate Technology

Author

Y. Liu
H. V. Meer
O. Gluschenkov
Xiaodong Yang, Missouri University of Science and TechnologyFollow
F. Sato
K. H. Cho
M. Ganz
H. Utomo
Y. Wang
U. Kwon
H. Kothari

Abstract

In this paper, for the first time we investigate and report the effective workfunction (eWF) modulation arising from stress memorization technique (SMT) in advanced replacement metal gate (RMG) CMOS technology. Our SMT data show a strong improvement in NFET short channel effect (SCE) besides a typical strain-induced mobility enhancement, suggesting better eWF. Further investigation proves that the eWF improvement is due to the electron affinity increase at silicon conduction band caused by the uniaxial channel strain from SMT. The impact of the electron affinity change on device performance and reliability has been evaluated. © 2013 JSAP.

Recommended Citation

Y. Liu and H. V. Meer and O. Gluschenkov and X. Yang and F. Sato and K. H. Cho and M. Ganz and H. Utomo and Y. Wang and U. Kwon and H. Kothari, "NFET Effective Work Function Improvement Via Stress Memorization Technique in Replacement Metal Gate Technology," Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers (IEEE), Jan 2013.

Meeting Name

2013 Symposium on VLSI Technology, VLSIT 2013

Department(s)

Mechanical and Aerospace Engineering

Sponsor(s)

The Japan Society of Applied Physics
The IEEE Electron Devices Society

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2013 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Jan 2013