Title

Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths

Abstract

A significant increase in parasitic resistance (R PARA) fluctuation is observed when S/D length is getting smaller than the characteristic length (L TRANS). Resistance change evaluated on double gate finFETs with various fin lengths shows an excellent agreement between the experimental data and the analytical model. Further R PARA fluctuation improvement can be realized by optimizing the L TRANS. © 2011 IEEE.

Meeting Name

2011 IEEE International SOI Conference, SOI 2011

Department(s)

Mechanical and Aerospace Engineering

Sponsor(s)

IEEE Electron Devices Society (EDS)

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Share

 
COinS