Advantages of GaN Based Light-Emitting Diodes with a P-InGaN Hole Reservoir Layer
A p-type InGaN hole reservoir layer (HRL) was designed and incorporated in GaN based light-emitting diodes (LEDs) to enhance hole injection efficiency and alleviate efficiency droop. The fabricated LEDs with p-type HRL exhibited higher light output power, smaller emission energy shift and broadening as compared to its counterpart. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the alleviated band bending in the last couple of quantum well and electron blocking layer, and thus better hole injection efficiency. Meanwhile, the efficiency droop can be effectively mitigated when the p-InGaN HRL was used. © 2012 American Institute of Physics.
T. Lu and S. Li and C. Liu and K. Zhang and Y. Xu and J. Tong and L. Wu and H. Wang and X. Yang and Y. Yin and G. Xiao, "Advantages of GaN Based Light-Emitting Diodes with a P-InGaN Hole Reservoir Layer," Applied Physics Letters, American Institute of Physics (AIP), Jan 2012.
The definitive version is available at http://dx.doi.org/10.1063/1.3700722
Mechanical and Aerospace Engineering
Article - Journal
© 2012 American Institute of Physics (AIP), All rights reserved.