Abstract
A p-type InGaN hole reservoir layer (HRL) was designed and incorporated in GaN based light-emitting diodes (LEDs) to enhance hole injection efficiency and alleviate efficiency droop. The fabricated LEDs with p-type HRL exhibited higher light output power, smaller emission energy shift and broadening as compared to its counterpart. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the alleviated band bending in the last couple of quantum well and electron blocking layer, and thus better hole injection efficiency. Meanwhile, the efficiency droop can be effectively mitigated when the p-InGaN HRL was used.
Recommended Citation
T. Lu and S. Li and C. Liu and K. Zhang and Y. Xu and J. Tong and L. Wu and H. Wang and X. Yang and Y. Yin and G. Xiao and Y. Zhou, "Advantages of GaN Based Light-Emitting Diodes with a P-InGaN Hole Reservoir Layer," Applied Physics Letters, vol. 100, American Institute of Physics (AIP), Mar 2012.
The definitive version is available at https://doi.org/10.1063/1.3700722
Department(s)
Mechanical and Aerospace Engineering
International Standard Serial Number (ISSN)
0003-6951
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2012 American Institute of Physics (AIP), All rights reserved.
Publication Date
01 Mar 2012
