Title

Advantages of GaN Based Light-Emitting Diodes with a P-InGaN Hole Reservoir Layer

Abstract

A p-type InGaN hole reservoir layer (HRL) was designed and incorporated in GaN based light-emitting diodes (LEDs) to enhance hole injection efficiency and alleviate efficiency droop. The fabricated LEDs with p-type HRL exhibited higher light output power, smaller emission energy shift and broadening as compared to its counterpart. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the alleviated band bending in the last couple of quantum well and electron blocking layer, and thus better hole injection efficiency. Meanwhile, the efficiency droop can be effectively mitigated when the p-InGaN HRL was used. © 2012 American Institute of Physics.

Department(s)

Mechanical and Aerospace Engineering

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2012 American Institute of Physics (AIP), All rights reserved.

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